![]() Remainder (more than 95%) cross over into collector region, constitute collector current IC.only a few electrons (less than 5%) combine with holes, constitute base current IB.Electrons flow through the p-type base, combine with holes.Forward bias causes electrons in n-type emitter to flow towards base, constitutes emitter current IE.Forward bias to emitter-base junction and reverse to collector-base junction.Ohmic contacts from each of bar base 1 and 2 and to emitter.opposite polarity of lightly dropped low resistivity material locate near center of bar.Consist of a bar of lightly dropped high resistivity semiconductor n type,.3 terminals semiconductor switching device, 3 terminals and 1 junction.PNP device has one (n) region between two (p) regions.NPN device has one (p) region between two (n) regions.Three terminal device, fabricated with three separately doped regions.(d) Describe about MOSFET operation, Snubber circuit. ![]() (c) Describe about Thyristor,GTO(gate turn off thyristor) (b) Describe about NPN and PNP transistor with sketch. (a) Explain about BJT (Bipolar Junction Transistor),Uni-junction transistor. ![]()
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